Title

20:1 Projection Soft X-Ray Lithography Using Tri-Level Resist

Abstract

We demonstrate nearly diffraction limited printing using soft x-ray radiation of approximately 36 and 14 nm wavelength. As an imaging system we used a 20×-reduction Schwarzschild-type objective with iridium coated mirrors for use at 36 nm and Mo/Si multilayer coated mirrors for use at 14 nm. An off-axis aperture and illumination were used to eliminate the central obscuration in the imaging system caused by the primary mirror. Two types of masks were used for exposures: an open-stencil one for 36 nm and a silicon membrane with a Ge absorber for 14 nm. The high absorption of carbonbased polymers at these wavelengths requires that imaging resist be very thin. Thin resist layers are not robust and, by themselves, not very useful for processing. By incorporating them into a tri-level resist, however, we have exposed, developed, and transferred features as small as 0.1 μm into silicon.

Publication Date

5-1-1990

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

1263

Number of Pages

90-98

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.20149

Socpus ID

0001968932 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0001968932

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