Title

Lateral Drift And Recombination Of Photogenerated Carriers In Multiple Quantum Well Hetero Nipi Structures

Keywords

Optical properties of substances; Semiconductor devices and materials

Abstract

The lateral spreading of photocarriers in a multiple quantum well hetero nipi structure is reported. The physical behaviour of the carriers is explained by a simple model. The results indicate the importance of decreasing the lateral device dimensions in order to obtain a large absorption change and a corresponding large change in the refractive index at low power levels. © 1990, The Institution of Electrical Engineers. All rights reserved.

Publication Date

1-1-1990

Publication Title

Electronics Letters

Volume

26

Issue

23

Number of Pages

1935-1936

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1049/el:19901252

Socpus ID

0025703386 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0025703386

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