Title

An Avalanche Multiplication Model For Bipolar Transistors

Abstract

A physics-based model that describes the multiplication factor and the generation current of bipolar transistors is presented. No extra fitting or model parameters are needed in the model. Comparison on the present model, the model employed in SPICE, and measurement data are included. © 1990.

Publication Date

1-1-1990

Publication Title

Solid State Electronics

Volume

33

Issue

1

Number of Pages

35-38

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(90)90006-Z

Socpus ID

0025066050 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0025066050

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