Title

New Laser Plasma Source For Extreme-Ultraviolet Lithography

Abstract

As the demands of lithographic fabrication of computer chips push toward ever-decreasing feature sizes, projection extreme-ultraviolet 1EUV2 lithography becomes an increasingly attractive technology. The radiation source of choice for this approach is a laser plasma with a high repetition rate. We report an investigation of a new candidate laser plasma source for EUV lithography that is based on line emission from ice-water targets. This radiation source has the potential to meet all the strict requirements of EUV conversion, debris elimination, operation, and cost for a demonstration lithographic system. © 1995 Optical Society of America.

Publication Date

1-1-1995

Publication Title

Applied Optics

Volume

34

Issue

25

Number of Pages

5750-5760

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/AO.34.005750

Socpus ID

84975571818 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/84975571818

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