Title
A Double Layer Microstrip Spatial Amplifier With Increased Active Device Density
Abstract
A new quasi-optical amplifier consisting of four HEMTs coupled to a single receiving and a single transmitting microstrip patch antenna is presented. This circuit can be used as a unit cell for the construction of a power combining amplifier array at millimeter-wave frequencies. The advantage of this circuit is its high active device density which is desirable in the construction of monolithic integrated circuits. The amplifier was constructed on double layer back to back microstrip circuits with a shared ground plane which provides an effective isolation between the receiving antenna and the transmitting antenna. The coupling between the two stages is accomplished through microstrip to slot transitions, which facilitates monolithic fabrication of such amplifiers. The measured gain at 10.1 GHz is 10 dB.
Publication Date
1-1-1995
Publication Title
1995 25th European Microwave Conference
Volume
1
Number of Pages
320-323
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/EUMA.1995.336971
Copyright Status
Unknown
Socpus ID
84897559820 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84897559820
STARS Citation
Ivanov, Toni and Mortazawi, Amir, "A Double Layer Microstrip Spatial Amplifier With Increased Active Device Density" (1995). Scopus Export 1990s. 1746.
https://stars.library.ucf.edu/scopus1990/1746