Title

A Power Amplifier Based On An Extended Resonance Technique

Abstract

A new power amplifier based on an extended resonance technique is presented. This technique produces high power through multiplying the power handling capability of a single device by the number of devices employed while maintaining the gain of a single-device amplifier. An X-band power combining amplifier employing four 100 mW MESFET’s was designed and constructed. The small signal gain was measured at 11.5 dB, and a maximum of 480 mW was obtained at 9.57 GHz with a power-added efficiency of 30.8%. © 1995 IEEE

Publication Date

1-1-1995

Publication Title

IEEE Microwave and Guided Wave Letters

Volume

5

Issue

10

Number of Pages

329-331

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/75.465047

Socpus ID

0029393536 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029393536

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