Title

A Numerical Study Of The Effect Of Base And Collector Structures On The Performance Of Algaas Gaas Multi-Finger Hbts

Abstract

A numerical analysis is presented to investigate different base and collector structures on the d.c. and a.c. performance of AlGaAs GaAs multi-finger heterojunction bipolar transistors (HBTs). The simulation is carried out using a two-dimensional device simulator called MEDICI. Five possible structures are studied and compared. The results show that different structures give rise to different electric fields in the base-collector junction and lattice temperatures in the HBT, which consequently affect the HBT's cutoff frequency and current gain, respectively. The physical mechanisms governing these changes are also discussed in detail. © 1995.

Publication Date

1-1-1995

Publication Title

Solid State Electronics

Volume

38

Issue

7

Number of Pages

1339-1346

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(94)00268-K

Socpus ID

0029346277 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029346277

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