Title
A Numerical Study Of The Effect Of Base And Collector Structures On The Performance Of Algaas Gaas Multi-Finger Hbts
Abstract
A numerical analysis is presented to investigate different base and collector structures on the d.c. and a.c. performance of AlGaAs GaAs multi-finger heterojunction bipolar transistors (HBTs). The simulation is carried out using a two-dimensional device simulator called MEDICI. Five possible structures are studied and compared. The results show that different structures give rise to different electric fields in the base-collector junction and lattice temperatures in the HBT, which consequently affect the HBT's cutoff frequency and current gain, respectively. The physical mechanisms governing these changes are also discussed in detail. © 1995.
Publication Date
1-1-1995
Publication Title
Solid State Electronics
Volume
38
Issue
7
Number of Pages
1339-1346
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/0038-1101(94)00268-K
Copyright Status
Unknown
Socpus ID
0029346277 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029346277
STARS Citation
Kager, A.; Liou, J. J.; and Huang, C. I., "A Numerical Study Of The Effect Of Base And Collector Structures On The Performance Of Algaas Gaas Multi-Finger Hbts" (1995). Scopus Export 1990s. 1828.
https://stars.library.ucf.edu/scopus1990/1828