Title

Effects of scaling and radiation on BiCMOS switching

Abstract

BiCMOS transient response including scaling, high current, and radiation effects has been studied. During the transient response minority carriers of the BJT are injected into the epitaxial region, widening the electrical base of the device and thus reducing current gain and the switching speed of the BiCMOS inverter. The BiCMOS gate delay decreases with increasing temperature and increases with decreasing power supply voltage. Radiation causes degradation of minority carrier lifetime and hence results in a decrease of the current gain of the BJT and an increasing BiCMOS switching delay.

Publication Date

1-1-1994

Publication Title

1994 International Electron Devices and Materials Symposium, EDMS 1994

Document Type

Article; Proceedings Paper

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/EDMS.1994.771279

Socpus ID

85063581631 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85063581631

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