Title

A Physical Model For The Base Transit Time Of Advanced Bipolar Transistors

Abstract

As the feature size of advanced bipolar junction transistors (BJTs) continues to scale down, the effects of nonuniform base doping, high-level injection, current-induced base pushout, and velocity overshoot all become prominent. These effects influence strongly the switching speed of the BJT as well as the gate delay of the BiCMOS. We study in detail the base transit time τB model valid for aritrary levels of injection and Gaussian base doping profile. For the devices considered, our calculations show that the conventional model (considers uniform base doping profile and no base pushout) overestimates τB by a factor of about 2.5 at low injection and underestimates τB by a factor of about 1.5 at high injection. The present model compares favorably with experimental data measured from a 0.12 μ base width BJT. © 1995.

Publication Date

1-1-1995

Publication Title

Solid State Electronics

Volume

38

Issue

1

Number of Pages

143-147

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(94)E0044-F

Socpus ID

0029220305 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029220305

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