Title

Surface Oxidation Of Polycrystalline Cadmium Telluride Thin Films For Schottky Barrier Junction Solar Cells

Abstract

Polycrystalline CdTe thin films grown on graphite or tungsten-coated graphite substrates by chemical vapor deposition (CVD) were exposed to the air at room temperature in a natural atmosphere of about 60% air humidity for 6 months. X-ray photoemission spectroscopy (XPS) and Auger electron spectroscopy (AES) of the films indicate that a tellurium dioxide (TeO2) overlayer has formed from this process. The effects of such an overlayer on the electrical property of polycrystalline CdTe-based Schottky barrier junction solar cells have also been discussed for the first time. It is shown that a solar cell formed on a CdTe film with TeO2 overlayer has considerably higher open-circuit voltage and fill factor than that formed on a CdTe film without TeO2 overlayer. Our study further indicates that using a polycrystalline CdTe film which is thermally oxidized at above room temperature (100-400°C) does not provide any improvement on the solar cell efficiency. © 1995.

Publication Date

1-1-1995

Publication Title

Solid State Electronics

Volume

38

Issue

6

Number of Pages

1151-1154

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(94)00229-9

Socpus ID

0000398681 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0000398681

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