Title
Lateral Carrier Sweep-Out In Multi-Quantum Well Optoelectronic Devices
Abstract
The initially photogenerated carriers in a waveguide device have a Gaussian density profile with a characteristic width of about 1mm. The transmission of the probe beam is a function of the overlap integral between the waveguide mode and the carrier density profile. In the absence of electric field, the carriers dissipate by lateral diffusion; and the characteristic time constant is about 1ns. However, with the application of the electric field carrier, drifting takes place and the combination of drift and diffusion result in a much faster change in the overlap integral between the waveguide mode and the carrier cross-sections. This lateral carrier transport process can be used to enhance the switching speed of devices such as the nonlinear directional coupler.
Publication Date
12-1-1995
Publication Title
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume
2
Number of Pages
295-296
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0029535954 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029535954
STARS Citation
Li Kam Wa, P.; Zhu, Li Jun; and Pamulapati, Jagadeesh, "Lateral Carrier Sweep-Out In Multi-Quantum Well Optoelectronic Devices" (1995). Scopus Export 1990s. 2097.
https://stars.library.ucf.edu/scopus1990/2097