Title
The effects of space-charge-layer thickness modulation on diffusion capacitance
Keywords
Bipolar devices; P/N junctions; Semiconductor devices and device physics
Abstract
The effect of junction space-charge-layer thickness modulation is normally omitted in the conventional diffusion capacitance model. This note calculates the diffusion capacitance including such an effect and investigates the errors introduced by the conventional model under a wide range of bias conditions, as well as for different doping concentrations, different layer thicknesses, and different temperatures. © 1994 IOP Publishing Ltd.
Publication Date
1-1-1994
Publication Title
Japanese Journal of Applied Physics
Volume
33
Issue
11R
Number of Pages
614-619
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1143/JJAP.33.6148
Copyright Status
Unknown
Socpus ID
84957329730 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84957329730
STARS Citation
Liou, Juin J. and Ortiz-Conde, Adelmo, "The effects of space-charge-layer thickness modulation on diffusion capacitance" (1994). Scopus Export 1990s. 223.
https://stars.library.ucf.edu/scopus1990/223