Title

Determination Of Physical Mechanisms Contributing To The Difference Between Drain And Source Resistances In Short-Channel Mosfets

Abstract

Knowledge of the difference between the drain and source resistances (Rd - Rs) of MOSFETs provides useful information on how the performance of MOSFETs will vary if the drain and source regions are interchanged. Device simulations are carried out to study the physical mechanisms underlying (Rd - Rs) in MOSFETs. The present results show that (Rd - Rs) is mainly due to the difference in the drain and source contact resistances, not to the difference in the source and drain doping densities, nor to misalignment of the gate with respect to the source and drain regions.

Publication Date

1-1-1996

Publication Title

Solid-State Electronics

Volume

39

Issue

2

Number of Pages

211-215

Document Type

Review

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(95)00125-5

Socpus ID

0030083721 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0030083721

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