Title

Growth Of Nd Doped Lasc3(Bo3)4 Single Crystals For Diode Pumped Microchip Lasers

Abstract

High efficiency diode pumped Nd-doped LaSc3(BO3)4 (LSB) microchip laser has been reported. Nd:LSB crystals offer unique properties of large absorption coefficient, broad absorption band (FWHM = 3 nm) and high Nd doping with little concentration quenching. It is ideal for diode pumped miniature lasers where high (> 15%) Nd doping is preferred. However, the stability field of LSB reduced dramatically with increasing Nd doping. There are two distinct effects of Nd doping. First, the temperature of growth reduces with higher Nd doping. Second, the peritectic composition also shifts towards the LaBO3 rich side. This paper, understanding the composition effect of the stability field of LSB, is now able to grow large single crystals in a flux-like top-seeded growth process. The growth rate is also proportionally reduced with higher Nd doping. Crystal produced by this new method is now in fabrication to be compared with the old samples.

Publication Date

1-1-1996

Publication Title

Conference on Lasers and Electro-Optics Europe - Technical Digest

Number of Pages

76-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0029766265 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029766265

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