Title
On The Reverse Short-Channel Effects Of Submicrom Mosfets
Abstract
A model for the reverse short-channel effects, based on a nonuniform lateral distribution of channel dopant, is verified with two-dimensional simulation results. The simulated results, in agreements with experimental measurements, reveal that the magnitude of the threshold voltage versus the mask channel length present a maximum value.
Publication Date
1-1-1996
Publication Title
Southcon Conference Record
Number of Pages
345-349
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0029696317 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029696317
STARS Citation
Narayanan, R.; Latif, Z.; and Ortiz-Conde, A., "On The Reverse Short-Channel Effects Of Submicrom Mosfets" (1996). Scopus Export 1990s. 2442.
https://stars.library.ucf.edu/scopus1990/2442