Title

Analysis of non-uniform current and temperature distributions in the emitter finger of AlGaAs/GaAs heterojunction bipolar transistors

Abstract

This paper develops a comprehensive and two-dimensional model for the AlGaAs/GaAs heterojunction bipolar transistor (HBT). The model takes into account the electrical-thermal interacting mechanism in both the width and length directions of the HBT emitter finger and thus is capable of describing the two-dimensional temperature and current distributions in the emitter finger of the HBT. Results produced from a three-dimensional device simulator are also included in support of the model. Copyright © 1996 Elsevier Science Ltd.

Publication Date

12-1-1996

Publication Title

Solid-State Electronics

Volume

39

Issue

12

Number of Pages

1709-1721

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(96)00123-2

Socpus ID

0030387556 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0030387556

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