Title
Effects of Ge profiles on base transit time and base resistance of SiGe HBT's
Abstract
Effects of the shape of Ge profiles in the base of the SiGe bipolar transistor have been evaluated. Analytical equations of base transit time and base resistance taking into account built-in field from nonuniform base doping and Ge bandgap grading are derived. Comparisons of base transit time and base sheet resistance for different Ge profiles are presented.
Publication Date
12-1-1996
Publication Title
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume
2
Number of Pages
876-879
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0030348674 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0030348674
STARS Citation
Song, J.; Yuan, J. S.; and Schwierz, F., "Effects of Ge profiles on base transit time and base resistance of SiGe HBT's" (1996). Scopus Export 1990s. 2644.
https://stars.library.ucf.edu/scopus1990/2644