Title
Second-order susceptibility of Ga0.5In0.5P crystals at 1.5 μm and their feasibility for waveguide quasi-phase matching
Abstract
The second-order susceptibilities (dij) of both ordered and disordered Ga0.5In0.5P semiconductor crystal films epitaxially grown on GaAs substrates are analyzed. Quasi-phase matching based on periodic order-disorder regions is proposed, and the analysis shows that three of the four independent coefficients, namely, d′33, d′31, and d′15 , but not d′14, can be modulated. Maker-fringe experiments were performed at 1.57 μm to measure these coefficients in the deposited crystals. However, the crystal-film orientation allowed a definitive determination of the d′14 coefficient (110 pm/V) only and an upper limit of 60 pm/V for d′33. More-sophisticated experimental techniques are proposed for measuring d′33. © 1997 Optical Society of America.
Publication Date
1-1-1997
Publication Title
Journal of the Optical Society of America B: Optical Physics
Volume
14
Issue
6
Number of Pages
1428-1436
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1364/JOSAB.14.001428
Copyright Status
Unknown
Socpus ID
0031511641 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0031511641
STARS Citation
Ueno, Yoshiyasu; Ricci, Vincent; and Stegeman, George I., "Second-order susceptibility of Ga0.5In0.5P crystals at 1.5 μm and their feasibility for waveguide quasi-phase matching" (1997). Scopus Export 1990s. 2731.
https://stars.library.ucf.edu/scopus1990/2731