Title
Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors
Abstract
The analytical equations of heterojunction bipolar transistors with nonuniform doping in the base and emitter was developed. Device characteristics between linearly and uniformly doped HBTs was evaluated. The linearly doped HBT has higher current gain, lower base transit time, higher cutoff frequency, and lower emitter-base junction capacitance than those of the uniformly doped HBT. © 1997 Elsevier Science Ltd.
Publication Date
1-1-1997
Publication Title
Solid-State Electronics
Volume
41
Issue
9
Number of Pages
1263-1268
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/S0038-1101(97)00064-6
Copyright Status
Unknown
Socpus ID
0031232815 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0031232815
STARS Citation
Ning, J. H.; Yuan, J. S.; and Song, J., "Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors" (1997). Scopus Export 1990s. 2786.
https://stars.library.ucf.edu/scopus1990/2786