Title

Photoluminescence studies of thermal impurity diffused porous silicon layers

Abstract

Porous silicon layers were formed on diffused layers. Both boron and phosphorus impurities were thermally diffused using solid sources in n-Si, p-Si, n-epi/Si and p-epi/Si substrates of various resistivities. Porous silicon on these layers was formed by electrochemical and chemical etching under various etching conditions. Strong visible luminescence was observed from these porous silicon structures. Infrared absorption studies indicated that surface molecule identities are immaterial to the enhancement or degradation of photoluminescence.

Publication Date

1-1-1997

Publication Title

Journal of Materials Science: Materials in Electronics

Volume

8

Issue

3

Number of Pages

163-169

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1023/A:1018594113294

Socpus ID

0031162277 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031162277

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