Title
Current gain long-term instability of AlGaAs/GaAs HBT: Physical mechanism and SPICE simulation
Abstract
The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e., burn-in test).
Publication Date
1-1-1997
Publication Title
Annual Proceedings - Reliability Physics (Symposium)
Number of Pages
248-252
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0030680434 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0030680434
STARS Citation
Sheu, S.; Liou, J. J.; and Huang, C. I., "Current gain long-term instability of AlGaAs/GaAs HBT: Physical mechanism and SPICE simulation" (1997). Scopus Export 1990s. 2892.
https://stars.library.ucf.edu/scopus1990/2892