Title

Evaluation of aluminum mole fraction for controlled thermal behavior of AlGaAs/GaAs HBT

Abstract

AlGaAs/GaAs HBT is now popular in high speed analog and digital integrated circuits due to its high emitter efficiency. The present work evaluates the performance of HBT at high current levels as self heating becomes significant. In particular, the 1D and 2D thermal behaviour of HBT is analysed. It is found that thermal stability improves with increasing Al mole fraction. As the mole fraction increases, the turn-on voltage of the device also increase. Two dimensional analysis reveal much reduced temperatures compared to one dimensional analysis. Multi-emitter finger heterojunction transistor exhibits non-uniform temperature distribution across the device. Finally, device layouts with narrower emitter and/or wider spacing between the emitter are used to reduce peak temperatures.

Publication Date

1-1-1994

Publication Title

Southcon Conference Record

Number of Pages

152-157

Document Type

Article; Proceedings Paper

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/southc.1994.498092

Socpus ID

0028737499 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028737499

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