Title

Ultrafast cross-well carrier transport in a strained multiple-quantum-well inGaAs-GaAs p-i-n modulator

Keywords

Mode-locked lasers; Optical modulation/demodulation; Optoelectronic devices, p-i-n diodes; Quantum-confined stark effect; Quantum-well devices; Semiconductor device modeling; Ultrafast optics

Abstract

We report ultrafast optical pump-probe measurements of cross-well carrier transport in a strained multiple-quantum-well InGaAs-GaAs p-i-n modulator. The transmission response of the modulator is recorded over a range of reverse bias values, wavelengths, and power levels, producing several qualitatively different response types. A simplified physical model is developed to describe this behavior. This model includes transmission changes due to exciton saturation and excitonic field screening, carrier emission from the quantum wells and drift through the intrinsic region, and voltage diffusion across the p- and n-doped electrodes. This model agrees well with the experimental data.

Publication Date

2-1-1997

Publication Title

IEEE Journal of Quantum Electronics

Volume

33

Issue

2

Number of Pages

192-197

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/3.552259

Socpus ID

0031076885 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031076885

This document is currently not available here.

Share

COinS