Title

Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing

Abstract

The effect of laser annealing on important detector characteristics such as dark current, spectral response, and absolute responsivity is investigated for bound-to-continuum GaAs/AlGaAs quantum-well infrared photodetectors (QWIPs) operating in the 8-12 μm wavelength regime. A set of experiments was conducted on QWIPs fabricated from both as-grown and laser-annealed multiple-quantum-well structures. Compared to the as-grown structure, the peak spectral response of the laser-annealed structure was shifted to longer wavelengths, though absolute responsivity was decreased by about a factor of two. In addition, over a wide range of bias levels, the laser-annealed QWIPs exhibited a slightly lower dark current compared to the as-grown QWIPs. Thus, the postgrowth control of GaAs/AlGaAs quantum-well composition profiles by laser annealing offers unique opportunities to fine tune various aspects of a QWIP' s response. © 1997 American Institute of Physics.

Publication Date

6-30-1997

Publication Title

Applied Physics Letters

Volume

70

Issue

26

Number of Pages

3573-3575

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1063/1.119237

Socpus ID

5944228965 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/5944228965

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