Title

Intense short wavelength sources for EUV lithography and other applications

Abstract

Extreme ultraviolet lithography (EUVL) uses reduction imaging to print microchip features smaller than 0.1 μm. The use of all-reflective optics makes it possible to operate a lithographic stepper in the 13-14 nm wavelength range with the necessary throughput required by commercial microchip manufacturers. The Lyman alpha transition in doubly ionized lithium is an efficient source at 13.5 nm. The ratio of excitation energy to radiated energy for this transition is 53% and only two electrons per atom are needed to be removed to produce this radiating state. The optimum lithium plasma radiating at 13.5 nm is estimated to require an electron density of 1018-1019 cm-3 and an electron temperature of 15-20 eV.

Publication Date

12-1-1997

Publication Title

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

Volume

1

Number of Pages

34-

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0031351775 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031351775

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