Title

Base transit time of the bipolar transistor in quasi-saturation

Abstract

The base transit time of the bipolar transistor (BJT) in quasi-saturation has been evaluated. The base transit time increases with quasi-saturation effect and reaches the maximum when the bipolar transistor is in hard saturation. © 1997 IEEE.

Publication Date

12-1-1997

Publication Title

IEEE Transactions on Electron Devices

Volume

44

Issue

9

Number of Pages

1558-1560

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.622617

Socpus ID

0031234004 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031234004

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