Title
A new approach to extract the threshold voltage of mosfet's
Abstract
A new method is presented to extract the threshold voltage of MOSFET's. It is developed based on an integral function which is insensitive to the drain and source series resistances of the MOSFET's. The method is tested in the environments of circuit simulator (SPICE), device simulation (MEDICI), and measurements. © 1997 IEEE.
Publication Date
12-1-1997
Publication Title
IEEE Transactions on Electron Devices
Volume
44
Issue
9
Number of Pages
1523-1528
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/16.622610
Copyright Status
Unknown
Socpus ID
0031233926 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0031233926
STARS Citation
Ortiz-Conde, Adelmo; Gouveia Fernandas, Emanuel D.; and Liou, J. J., "A new approach to extract the threshold voltage of mosfet's" (1997). Scopus Export 1990s. 3145.
https://stars.library.ucf.edu/scopus1990/3145