Title
Negative binomial yield model parameter extraction using wafer probe bin map data
Keywords
Defect; wafer Probe; yield; yield Prediction
Abstract
This paper presents a new technique of extracting the parameters associated with the Negative Binomial yield model from wafer probe bin map data. The method presented uses an exact solution of the simultaneous non-linear equations resulting from the application of one, two, and three die windowing schemes in the analysis of wafer probe results. The results show that a large number of the wafers analyzed have cluster parameters greater than that typically reported in the literature.
Publication Date
1-1-1998
Publication Title
Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Volume
1998-August
Number of Pages
130-133
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/HKEDM.1998.740204
Copyright Status
Unknown
Socpus ID
84859940068 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/84859940068
STARS Citation
Langford, R. E. and Liou, J. J., "Negative binomial yield model parameter extraction using wafer probe bin map data" (1998). Scopus Export 1990s. 3204.
https://stars.library.ucf.edu/scopus1990/3204