Title

Photoluminescence enhancement in porous silicon layers

Abstract

Porous silicon samples were prepared on diamond scratched n-type and p-type silicon substrates with various resistivities. Photoluminescence studies performed on these porous silicon layers indicated an enhancement of photoluminescence intensity as well as red-shifting for diamond scratched samples compared to unscratched samples. © 1998 Kluwer Academic Publishers.

Publication Date

1-1-1998

Publication Title

Journal of Materials Science: Materials in Electronics

Volume

9

Issue

4

Number of Pages

271-274

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1023/A:1008868421127

Socpus ID

0032131255 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032131255

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