Title

Microstructural development of SCS-6 SiC fibers during high temperature creep

Abstract

Microstructural development of SCS-6 SiC fibers induced by creep deformation at 1400°C is presented. Grain growth occurs in all SiC regions of the fiber during creep. Portions of the SiC4 region transform from βSiC to αSiC growing at the expense of the βSiC. The SiC1 through SiC3 regions of the fiber consist of a distinct (C + βSiC) two-phase region. The grain growth of the βSiC grains in the two-phase region is not as extensive as in the SiC4 region, suggesting that the presence of excess carbon may inhibit the growth of βSiC.

Publication Date

1-1-1998

Publication Title

Journal of Materials Research

Volume

13

Issue

7

Number of Pages

1853-1860

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1557/JMR.1998.0263

Socpus ID

0032123879 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032123879

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