Title

Current-dependent collector resistance of the bipolar transistor in quasi-saturation

Keywords

Bipolar transistor; Current-dependent collector resistance; MEDICI simulation; Quasi-saturation

Abstract

The current-dependent collector resistance of the bipolar transistor in quasi-saturation has been modelled. The analytical collector resistance model is derived from device physics. The MEDICI simulation is employed to justify the assumptions used in the model derivation. The high-current collector current spreading effect on the collector resistance is accounted for, and the predictions of the collector current, using the current-dependent collector resistance model are compared with the experimental data. Good agreement between the model predictions and experimental data has been obtained. © IEE, 1998.

Publication Date

1-1-1998

Publication Title

IEE Proceedings: Circuits, Devices and Systems

Volume

145

Issue

2-5

Number of Pages

66-70

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1049/ip-cds:19981668

Socpus ID

0032047798 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032047798

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