Title

Three-photon absorption in InAs

Abstract

Using 125 ps laser pulses, we observe three-photon absorption in room temperature InAs at a wavelength of 9.54 μm. This effect is readily identified by temperature-tuning the semiconductor bandgap through the three-photon absorption edge. A three-photon absorption coefficient of K3= 1 ± 0.6 × 10-3 cm3 MW-2 is extracted from non-linear absorption data obtained with an open-aperture Z-scan. Time-resolved measurement at high irradiance reveals an increase of absorption due to hot carriers. We also present an autocorrelation measurement of our CO2 laser pulse that shows two complete optical free-induction-decay cycles.

Publication Date

1-1-1998

Publication Title

Optical and Quantum Electronics

Volume

30

Issue

3

Number of Pages

193-200

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1023/A:1006962228937

Socpus ID

0032018401 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032018401

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