Title

Theoretical investigation of the electrical behavior of SiC MESFETs for microwave power amplification

Keywords

Cut-Off Frequency; Device Simulation; Microwave Devices; Output Power; SiC MESFET

Abstract

The electrical behavior of 3C, 4H, and 6H SiC MESFETs has been simulated using an analytical two region transistor model which takes into account the nonlinear v-E characteristics, incomplete ionization, and self heating. The results show that the 4H SiC polytype is best suited for microwave power MESFETs, but 3C and 6H SiC also seem to be useful materials for this purpose. Using Si instead of SiC as the subtrate material causes increased channel temperatures and a deterioration of the transistor performance at high gate-source voltages.

Publication Date

1-1-1998

Publication Title

Materials Science Forum

Volume

264-268

Issue

PART 2

Number of Pages

973-976

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.4028/www.scientific.net/msf.264-268.973

Socpus ID

0031699019 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031699019

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