Title
High temperature simulation of 6H- and 4H-silicon carbide MOSFETs
Abstract
Vertical power DMOSFET has been simulated using the device simulator ISE-TCAD. The most recent parameters for 6H and 4H SiC crystals are used for this simulation. Vertical DMOSFET with different channel lengths operating in two different temperatures has been examined.
Publication Date
1-1-1998
Publication Title
Conference Proceedings - IEEE SOUTHEASTCON
Number of Pages
271-274
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0031673558 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0031673558
STARS Citation
Shams, S. F.; Sundaram, K. B.; and Chow, L. C., "High temperature simulation of 6H- and 4H-silicon carbide MOSFETs" (1998). Scopus Export 1990s. 3421.
https://stars.library.ucf.edu/scopus1990/3421
COinS