Title
Luminescence from neodymium-ion-implanted As2S3 waveguides
Abstract
The luminescence of a neodymium-doped arsenic trisulfide planar waveguide at 1083 nm is reported. The dopant was introduced into the chalcogenide glass by ion implantation. The dopant distribution following ion implantation was predicted by molecular dynamic simulation and measured by Rutherford backscattering spectrometry. The most efficient pump wavelength was determined to be 818 nm. This observation of luminescence from rare-earth-ion implantation into chalcogenide glass, for the first time to the authors' knowledge, suggests that this technique can be useful for rare-earth-doped devices. © 1998 Optical Society of America.
Publication Date
1-1-1998
Publication Title
Journal of the Optical Society of America B: Optical Physics
Volume
15
Issue
4
Number of Pages
1305-1308
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1364/JOSAB.15.001305
Copyright Status
Unknown
Socpus ID
0001689814 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0001689814
STARS Citation
Meneghini, C.; Viens, J. F.; and Villeneuve, A., "Luminescence from neodymium-ion-implanted As2S3 waveguides" (1998). Scopus Export 1990s. 3497.
https://stars.library.ucf.edu/scopus1990/3497