Title
An empirical model for the characterization of hot-carrier induced MOS device degradation
Publication Date
1-30-1998
Publication Title
Solid-State Electronics
Volume
42
Issue
1
Number of Pages
173-175
Document Type
Article
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0041353785 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0041353785
STARS Citation
Wong, Waisum; Ice, Ali; and Liou, J. J., "An empirical model for the characterization of hot-carrier induced MOS device degradation" (1998). Scopus Export 1990s. 3510.
https://stars.library.ucf.edu/scopus1990/3510
COinS