Title

High-power mode-locked external cavity semiconductor laser using inverse bow-tie semiconductor optical amplifiers

Keywords

High-power diode lasers; Mode-locked diode lasers; Semiconductor optical amplifiers; Ultrafast pulse generation

Abstract

This paper presents experimental results of using an inverse bow-tie gain guided semiconductor optical amplifier (SOA) as the optical gain element in a high-power external cavity semiconductor laser. An average output power of 700 mW is demonstrated in continuous-wave (CW) operation while 400 mW of average power is obtained in both passive and hybrid mode-locked operation, with subsequent optical amplification in an identical SOA. The mode-locked laser operates at a repetition rate of 1.062 GHz, owing to the interplay between the gain and saturable absorber dynamics. Optical pulses are generated with a temporal duration of 5 ps, which implies a pulse energy of 376 pJ, and a peak power of 60 W. Further reduction of the optical pulsewidth to 1.3 ps is also achieved by using dispersion compensation techniques. These results show the promise of novel SOA devices for use as gain elements in external cavity semiconductor lasers. The generated output pulse characteristics from mode-locked operation is sufficient for use in novel three-dimensional data storage applications, and in large-scale commercial printing and marking applications.

Publication Date

3-1-1998

Publication Title

IEEE Journal on Selected Topics in Quantum Electronics

Volume

4

Issue

2

Number of Pages

209-215

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/2944.686725

Socpus ID

0032023273 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032023273

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