Title

A multi-emitter finger AlGaAs/GaAs HBT model including the effects of two-dimensional temperature distribution on emitter fingers

Abstract

Two-dimensional temperature distribution on the emitter fingers of multi-finger AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is studied, and a model including such effects was developed to describe the HBT behavior and performance, such as the d.c. current gain and cutoff frequency. Device design issues such as the number of fingers, finger spacing, and finger dimension were considered. Results obtained from measurements and simulated from a three-dimensional device simulator are included in support of the model. Further, the present model is compared against the conventional model to assess the degree of inaccuracy caused by the use of one-dimensional temperature profile in HBT modeling. © 1998 Elsevier Science Ltd.

Publication Date

5-6-1998

Publication Title

Solid-State Electronics

Volume

42

Issue

5

Number of Pages

693-698

Document Type

Article

Personal Identifier

scopus

Socpus ID

0032068920 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032068920

This document is currently not available here.

Share

COinS