Title

An improved definition for modelling the threshold voltage of MOSFETs

Abstract

Traditionally, the threshold voltage VT of MOSFETs is modeled using the definition that the strong inversion occurs when the surface band bending is equal to twice the potential in bulk semiconductor. In this paper, an improved VT definition is proposed. It is demonstrated that VT calculated from the improved definition is in better agreement with those obtained from several existing VT extraction methods than the conventional definition. © 1998 Published by Elsevier Science Ltd. All rights reserved.

Publication Date

9-1-1998

Publication Title

Solid-State Electronics

Volume

42

Issue

9

Number of Pages

1743-1746

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(98)00138-5

Socpus ID

0032165018 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032165018

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