Title

Self-guiding effects in semiconductor waveguide amplifiers

Abstract

An active double heterostructure diode structure is employed as a nonlinear medium to demonstrate soliton waveguiding effects. It was observed that the nonlinearities due to reverse bandfilling in active semiconductor amplifiers give rise to a spectral region where self-focusing takes place for photon energies corresponding to the peak of the gain. By monitoring the mode-profile at the output of the slab waveguide as a function of wavelength, a district narrowing of the output beam lateral dimension was observed and the beam profile appeared to stay stable for a range of input intensities. The slab waveguide was 650 μm long and each of the contact pads for electrical carrier injection was 60 μm wide. The experiments showed that the lateral dimension of the near field profile output beam changed from a FWHM width of 32 μm to 5.5 μm as the wavelength of the laser was tuned into the optimum range for self-focusing nonlinearities. This corresponds to a peak nonlinear coefficient of n2=2.8 x 10-10 cm2/watt. ©2003 Copyright SPIE - The International Society for Optical Engineering.

Publication Date

12-1-1998

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

3384

Number of Pages

153-160

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.317656

Socpus ID

58649103760 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/58649103760

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