Title
Series Resistance And Effective Channel Length Extraction Of N-Channel Mosfet At 77 K
Keywords
MOSFETs; Semiconductor device characterisation
Abstract
A simple method is presented to extract the effective channel length and series resistance of n-channel MOSFETs having 0.6–2.0μm mask channel lengths at room and liquid nitrogen temperatures. Our results show that the effective channel length increases and the series resistance decreases when the temperature is reduced from 300 to 77 K. © 1994, IEE. All rights reserved.
Publication Date
1-1-1994
Publication Title
Electronics Letters
Volume
30
Issue
8
Number of Pages
670-672
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1049/el:19940464
Copyright Status
Unknown
Socpus ID
0028408308 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0028408308
STARS Citation
Ortis-Conde, A. C.; Liou, J. J.; and Garcia Sánchez, F. J.S., "Series Resistance And Effective Channel Length Extraction Of N-Channel Mosfet At 77 K" (1994). Scopus Export 1990s. 365.
https://stars.library.ucf.edu/scopus1990/365