Title

Procedure For The Extraction Of The Bulk-Charge Effect Parameter In Mosfet Models

Abstract

A technique is proposed to extract the bulk-charge effect parameter from the triode region of operation of the MOSFET characteristics. The method involves making two measurements of drain current as a function of gate voltage at two small values of the drain voltage. The procedure was tested on synthetic Id-Vgs characteristics modeled with SPICE and simulated by a 2D device simulator. It was also applied to measured Id-Vgs characteristics of real devices. Both constant and normal field dependent mobilities were considered for comparison. Very good agreement is obtained between the parameters used in modeling and simulation and the extracted values.

Publication Date

1-1-1999

Publication Title

Solid-State Electronics

Volume

43

Issue

7

Number of Pages

1295-1298

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(99)00062-3

Socpus ID

0345148482 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0345148482

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