Title
Incomplete Ionization In A Semiconductor And Its Implications To Device Modeling
Abstract
The ionization of impurity atoms is an important process in determining the number of free carriers, and thus the conductivity and other physical properties, in semiconductors. In this paper, a detailed derivation for the ionization percentage of impurity atoms is given. Furthermore, to illustrate the errors associated with the conventional complete ionization assumption, the results are applied to the modeling of the current-voltage characteristics of a p/n junction diode. Two-dimensional device simulations are included in support of the model.
Publication Date
1-1-1999
Publication Title
Microelectronics Reliability
Volume
39
Issue
8
Number of Pages
1299-1303
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/S0026-2714(99)00027-X
Copyright Status
Unknown
Socpus ID
0033339051 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0033339051
STARS Citation
Xiao, G.; Lee, J.; and Liou, J. J., "Incomplete Ionization In A Semiconductor And Its Implications To Device Modeling" (1999). Scopus Export 1990s. 3889.
https://stars.library.ucf.edu/scopus1990/3889