Title

Incomplete Ionization In A Semiconductor And Its Implications To Device Modeling

Abstract

The ionization of impurity atoms is an important process in determining the number of free carriers, and thus the conductivity and other physical properties, in semiconductors. In this paper, a detailed derivation for the ionization percentage of impurity atoms is given. Furthermore, to illustrate the errors associated with the conventional complete ionization assumption, the results are applied to the modeling of the current-voltage characteristics of a p/n junction diode. Two-dimensional device simulations are included in support of the model.

Publication Date

1-1-1999

Publication Title

Microelectronics Reliability

Volume

39

Issue

8

Number of Pages

1299-1303

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0026-2714(99)00027-X

Socpus ID

0033339051 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033339051

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