Title

Simulation Of Silicon Carbide Power Mosfets At High Temperature

Abstract

Numerical device simulations have been performed on SiC vertical power MOSFETs at high temperatures using ISE-TCAD device simulator. The same device structure and temperatures were used for 6H and 4H SiC SiC materials for the device simulation. All the parameters used in the simulation for SiC were obtained from the recently reported values. © 1998 Elsevier Science Ltd. All rights reserved.

Publication Date

1-1-1999

Publication Title

Solid-State Electronics

Volume

43

Issue

2

Number of Pages

367-374

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(98)00264-0

Socpus ID

0033079509 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033079509

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