Title
Modeling And Measurement Approaches For Electrostatic Discharge In Semiconductor Devices And Ics: An Overview
Abstract
Electrostatic charges can be generated everywhere. When they are discharged through semiconductor devices and integrated circuits, an event called an electrostatic discharge (ESD), failure of electronics systems using these devices and ICs can occur. This paper first gives an overview of the ESD sources and models. Then the emphasis is placed on the modeling and measurements of the most commonly used of these models called the human body model (HBM). Various HBM protection circuits are examined to look at ways of preventing ICs from being damaged should ESD events occur. The issue of HBM measurements is also addressed so that the rapid transient associated with this ESD model can be accurately measured and characterized.
Publication Date
1-1-1999
Publication Title
Microelectronics Reliability
Volume
39
Issue
5
Number of Pages
579-593
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/S0026-2714(99)00049-9
Copyright Status
Unknown
Socpus ID
0032685575 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0032685575
STARS Citation
Lee, J. C.; Croft, G. D.; and Liou, J. J., "Modeling And Measurement Approaches For Electrostatic Discharge In Semiconductor Devices And Ics: An Overview" (1999). Scopus Export 1990s. 3973.
https://stars.library.ucf.edu/scopus1990/3973