Title
High-Power Plasma Discharge Source At 13.5 Nm And 11.4 Nm For Euv Lithography
Abstract
An intense pulsed capillary discharge source operating at 13.5 nm and 11.4 nm, suitable for use in conjunction with Mo:Si or Mo:Be coated optics, has produced an average power of approximately 1.4 W within a 0.3 nm emission bandwidth from the end of the capillary when operated at a repetition rate of 100 Hz. The source is comprised of a small capillary discharge tube filled with xenon gas at low pressure to which electrodes are attached at each end. When a voltage is applied across the tube, an electrical current is generated for short periods within the capillary that produces highly ionized xenon ions radiating in the EUV. Issues associated with plasma bore erosion are currently being addressed from the standpoint of developing such a source for operation at repetition rates of greater than 1 kHz.
Publication Date
1-1-1999
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
3676
Issue
I
Number of Pages
272-275
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.351098
Copyright Status
Unknown
Socpus ID
0032663961 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0032663961
STARS Citation
Silfvast, W. T.; Klosner, M.; and Shimkaveg, G., "High-Power Plasma Discharge Source At 13.5 Nm And 11.4 Nm For Euv Lithography" (1999). Scopus Export 1990s. 3992.
https://stars.library.ucf.edu/scopus1990/3992