Title

Source characterization for x-ray proximity lithography

Abstract

Calibrated x-ray spectra from laser-produced plasmas of materials with atomic numbers varying between 12 (Mg) and 83 (Bi) were recorded to optimize the conversion efficiency for proximity lithography in a 0.5-nm band centered at 1 nm. The highest efficiency (−0.8%) was found for L-shell emitters such as Cu and M-shell emitters such as Ba. First-order debris measurements were carried out by measurement of the layer thickness deposited on witness plates 2 cm away from the target. Layers of 30-nm thickness were deposited in a single laser shot with Au and W targets. © 1994 Optical Society of America.

Publication Date

12-15-1994

Publication Title

Optics Letters

Volume

19

Issue

24

Number of Pages

2047-2049

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1364/OL.19.002047

Socpus ID

0028743294 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028743294

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