Title

Wet Thermal Oxidation Of Gan

Abstract

Thermal oxidation of GaN was conducted at 700-900 °C with O2, N2, and Ar as carrier gases for 525-630 Torr of H2O vapor. Upon oxidation of both GaN powders and n-GaN epilayers, the monoclinic β-Ga2O3 phase was identified using glancing angle x-ray diffraction. The chemical composition of the oxide was verified using x-ray photoelectron spectroscopy. In experiments conducted using GaN powder, the oxide grew most rapidly when O2 was the carrier gas for H2O. The same result was obtained on n-type GaN epilayers. Furthermore, the thickness of the oxide grown in H2O with O2 as the carrier gas was found to be proportional to the oxidation time at all temperatures studied, and an activation energy of 210±10 kJ/mol was obtained. Scanning electron microscopy revealed a smoother surface after wet oxidation than was reported previously for dry oxidation. However, cross-sectional transmission electron microscopy revealed that the wet oxide/GaN interface was irregular and non-ideal for device fabrication, even more so than the dry oxide/GaN interface. This observation was consistent with poor electrical properties.

Publication Date

1-1-1999

Publication Title

Journal of Electronic Materials

Volume

28

Issue

3

Number of Pages

257-260

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/s11664-999-0024-z

Socpus ID

0032654388 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032654388

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