Title

Modeling The Base-Collector Heterojunction Barrier Effect At High Current Densities Of Sige Hbts

Abstract

The conduction band barrier effect at high collector current densities of the SiGe heterojunction bipolar transistor has been modeled. The effects of conduction band discontinuity on the collector current and collector-base heterojunction capacitance are examined. The analytical results are compared with experimental data. Good agreement between the model predictions and experiment is obtained.

Publication Date

2-1-1999

Publication Title

Solid-State Electronics

Volume

43

Issue

2

Number of Pages

457-461

Document Type

Article

Personal Identifier

scopus

Socpus ID

0033079994 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0033079994

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