Title

Study of the current transport in AlGaAs/GaAs HBTs with graded and setback layers

Abstract

The combined effects of graded and setback layers (WG and WI) on the AlGaAs/GaAs heterojunction bipolar transistor (HBT) d.c. performance are investigated, and an analytical model which can describe the behavior of such HBTs is presented. The HBT base and collector currents accounting for the variation of the conduction and valence bands due to the presence of WG and WI are also calculated. It is shown that including WG and WI actually degrades the HBT current gain at low current levels. The current gain at high current levels, on the other hand, can be enhanced if WI = 150 angstrom and 0 ≤ WG ≤ 300 angstrom or WI = 0 and 150 angstrom ≤ WG ≤ 300 angstrom are used. The model predictions compare favorably with results calculated from a numerical model.

Publication Date

12-1-1994

Publication Title

Southcon Conference Record

Number of Pages

256-261

Document Type

Article; Proceedings Paper

Identifier

scopus

Personal Identifier

scopus

Socpus ID

0028746249 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028746249

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